Semiconductor materialscan be categorized into two main classes: intrinsic semiconductors and extrinsic semiconductors. Intrinsic semiconductors are the pure form of semiconductor materials while extrinsic semiconductor materials are formed by adding some impurity to the pure semiconductors.

这内在和外在半导体之间的主要区别is that intrinsic semiconductors are pure in form, no form of impurity is added to them while extrinsic semiconductors being impure, contains the doping of trivalent or pentavalent impurities.

这两种类别的半导体可以基于许多因素来区分，例如添加杂质或掺杂，电导率，电子密度和半导体材料中的孔。

内在和外在半导体之间的差异 - 表格

Let’s have a look at the differences between the two with the help of a table.

Basis of Comparison	Intrinsic Semiconductor	外在半导体
Impurity present in the material	Intrinsic semiconductors are pure forms of semiconductors, hence they do not have a significant amount of impurity.	Extrinsic semiconductors are made by adding some impurity to the pure form of semiconductors.
电导率	它们表现出差的电导率差。	电导率in the case of extrinsic semiconductors is significantly high as compared to intrinsic semiconductors.
这density of charge carriers	In intrinsic semiconductors, the number of free electrons in the conduction band is equal to the number of holes in the valence band.	这number of electrons and holes are not equal in extrinsic semiconductors and depends on the type of extrinsic semiconductor.
电导率的依赖性	内在半导体的电导率仅取决于温度。	这electrical conductivity of extrinsic semiconductors depends on the temperature as well as the amount of doped impurity.
Position of Fermi level	在内在半导体中，费米能量水平位于价和传导带的中间。	在外部半导体中，FERMI水平朝向价或导带。
例子	例子include the crystalline forms of pure silicon or germanium.	实例包括硅（Si）和锗（Ge）晶体，其具有As，Sb，P等的杂质原子，或B，Al等。

什么是内在的半导体？

Intrinsic semiconductors are the pure form of semiconductor materials. No external impurity is added or doped in intrinsic semiconductors. Since intrinsic semiconductors are made from highly pure semiconductor materials, they are also known as pure semiconductors.

在内在半导体中，导通带中的游离电子的数量等于价带中的孔数。

For intrinsic semiconductors the band gap between the conduction band and valence band is small and the Fermi energy levels lie in the middle of the conduction and valence band.

内在半导体的电导率非常低，仅取决于温度。电导率随温度呈指数增加。外部半导体分为p型和n型半导体，而是内在半导体进一步甲基。

内在半导体中的自由电荷载体由称为热生成的机制产生，并且它是在半导体固体中的相邻原子之间的一些键断裂。

这里有一件事是，虽然内在半导体可能具有很少的杂质，但杂质浓度应明显低于游离载体的浓度。

什么是外部半导体？

它是一种半导体，其中以受控速率加入杂质以使其导电。

一个本征半导体可以进行一个小点ount of current even at room temperature, but this small current is not useful for the preparation of various electronic devices. So to make these semiconductors conductive a small amount of suitable impurity is added to the semiconductors.

Doping is a process by which an impurity is added to a semiconductor material. During the preparation of extrinsic semiconductor, the amount of impurity and type of impurity has to be analyzed carefully. The impurity is added to the semiconductors to increase the number of charge carriers (free electrons or holes) to make them conductive.

If we add a pentavalent impurity having 5 valence electrons to the pure semiconductor a large number of free electrons will exist.

如果我们添加具有三个价电子的三价杂质，则在半导体中将存在大量的孔。

在外部半导体中，电子和孔的浓度不等于。外部半导体的电导率优于内在半导体。外部半导体的电导率取决于温度以及杂质浓度。与本征半导体不同，外部半导体具有两种类型：p型和n型。基于掺杂到半导体的元件类型的基础上分类外部半导体。

Conclusion

根据上面的讨论，我们已经得出结论，外在和内在的是两种重要的半导体材料。本征半导体是纯半导体材料，而外部半导体掺杂有某些类型的杂质以增加它们的电导率。

这内在和外在半导体之间的差异被讨论，我们还解释了内在和外在的半导体，让事情更加清晰。

作者
Deepak Yadav.
Aligarh Muslim University, Aligarh